The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Jun. 09, 1998
Applicant:
Inventors:
Alexander Michaelis, Wappingers Falls, NY (US);
Rajiv Ranade, Fishkill, NY (US);
Bertrand Flietner, Hopewell Junction, NY (US);
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438386 ; 438714 ;
Abstract
A vertical trench in a silicon wafer for use in forming the storage capacitor of a DRAM is etched by reactive ion etching in a manner to have a profile that has multiple waists. This profile is obtained by varying the rate of flow of coolant in the base member on which the silicon wafer is supported during the reactive ion etching to vary the temperature of the silicon wafer during the etching. Alternatively, the multiple waists are achieved by either by varying the ratio of the different gases in the etching chamber or the total gas pressure in the chamber.