The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Aug. 13, 1998
Lurng Shehng Lee, Hsinchu, TW;
Chung Len Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
With the growing practice of doping gates for MOSFETs with boron, problems have been encountered due to later diffusion of the boron into the active region. To block this, argon ions are implanted into the gate pedestal material prior to doping it with boron. The damage caused by the argon ions results in traps that getter the boron atoms, behaving in effect as a diffusion barrier. The invention is directed specifically to gate pedestals that are less than about 3000 Angstroms thick. Under these conditions it has been determined that the implantation energies of the argon ions should not exceed 80 keV. It is also important that the dosage of argon be in the range from 1.times.10.sup.15 to 1.times.10.sup.16 per cm.sup.2. Preferably doses in excess of 5.times.10.sup.15 should be used as they also lead to improvements in subthreshold swing and hot carrier immunity.