Method for estimating quiescent current in integrated circuits

Abstract

A method for improving the accuracy of quiescent current estimation for integrated circuits. When used with a CMOS process, the method involves selecting transistors having a polysilicon gate length corresponding to the minimum length permitted by process design rules. For each of the selected transistors, the intersection of the width of the polysilicon gate and the active area of the transistor is calculated. The widths of all of the selected minimum length devices are summed to generate a total width dimension value. The total width dimension value is multiplied by a predetermined quiescent current per unit width conversion value to produce an estimate of the quiescent current drawn by the integrated circuit. In an alternate embodiment of the invention, the total width dimension value is multiplied by a range of predetermined quiescent/leakage current per unit width values representing a range of testing conditions and temperatures. The method of the invention can be implemented as a stand-alone software routine or integrated within a design verification or test pattern generation tool. The accuracy of quiescent current estimation provided by the invention permits realistic test values to be established, thereby enhancing both quality and yield of semiconductor processes.