The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Jun. 07, 1999
Applicant:
Inventors:
Masashi Mizuta, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
Yasunobu Nashimoto, Tokyo, JP;
Kazunori Asano, Tokyo, JP;
Yosuke Miyoshi, Tokyo, JP;
Yasunori Mochizuki, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257488 ; 257260 ;
Abstract
A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.
Mizuta, Masashi. (2000). Fet having non-overlapping field control electrode between gate and drain (U.S. Patent No. 6100571). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6100571
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile