The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Dec. 19, 1997
Kimio Ueda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
MOS devices are formed on a wafer having a thick silicon layer 3a and a thin silicon layer 3b formed on a buried oxide film. The MOS device formed in the thick silicon layer 3a is activated in a partial depletion type mode. Further, the MOS device formed in the thick silicon layer 3b is activated in a perfect depletion type mode. Therefore, a low leakage current and a high-speed operation can be achieved simultaneously. It is thus possible to solve problems that an integrated circuit must be formed by either one of the partial depletion type device and the perfect depletion type device, and the low leakage current and the high-speed operation are hard to come to fruition simultaneously.