The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Nov. 19, 1997
Applicant:
Inventors:
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 20 ; 257194 ;
Abstract
A semiconductor device includes a semi-insulating substrate. A channel layer is formed on the semi-insulating substrate. An electron supply layer is formed on the semi-insulating substrate for generating a two-dimensional electron gas. The electron supply layer includes a doped superlattice layer. The superlattice layer includes layers of In.sub.X Al.sub.1-X As and layers of In.sub.Y Al.sub.1-Y As which alternate with each other, where 0.ltoreq.X.ltoreq.1.0 and 0.ltoreq.Y.ltoreq.1.0, and X differs from Y.