The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2000

Filed:

Nov. 05, 1998
Applicant:
Inventors:

Jumn-Min Fam, Hsinchu Hsien, TW;

Tang Yu, Hsinchu Hsien, TW;

Eddie Chen, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
4272481 ; 427294 ;
Abstract

A method for accurately determining a time to clean a LPCVD system is disclosed, in which gas flow readings of the gas supplying source from a mass flow meter (MFM) are recorded during the depositing process. The gas flow volume of the gas supplying source read from the MFM decreases as the congestion in the vacuum route of the LPCVD system increases. Based on the established relationship, an accurate time for cleaning the LPCVD system can be determined, so as to avoid product defects due to an excessive deposition.


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