The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Mar. 27, 1998
Applicant:
Inventors:
Chang Jae Lee, Chungcheongbuk-do, KR;
Nae Hak Park, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Cheongju-Si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438680 ; 438622 ; 438637 ; 438627 ; 438672 ;
Abstract
A method for forming metal line of a semiconductor device in which, if the aspect ratio of the contact holes is big, contact holes are buried with a CVD method using the HDP method, and the line process is simplified to improve the reliability is disclosed, including the steps of forming an insulating film having a contact hole on a semiconductor substrate; forming a barrier metal layer on the insulating film including the contact hole; and forming a metal line layer on the barrier metal layer with a CVD method using a high density plasma.