The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Jun. 19, 1998
Takanori Ozawa, Kyoto, JP;
Takaaki Fuchikami, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A nonvolatile memory element capable of using desired ferroelectric materials, exhibiting a high reliability and performing processings such as reading of information without destruction of stored contents is provided. A memory cell comprises two capacitors Cf1 and Cf2 connected to each other in series. Both capacitors are ferroelectric capacitors manufactured by the same steps. Accordingly, the coupling ratio between both capacitors can be changed by only the change of surface areas thereof. A voltage corresponding to the information to be stored is applied to the opposite ends of the memory cell 20 to cause polarization reversal and as a result, the information is written thereinto. In order to read the stored information, a ground potential is applied to the opposite ends of the memory cell 20. On the basis of the potential generated at a connection 20c upon the application of the ground potential, the information can be read.