The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Jul. 13, 1998
Dong-yun Kim, Suwon, KR;
Kyoung-hwan Yeo, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A gas mixture for etching a polysilicon electrode layer in a plasma etching apparatus, and a method for etching the electrode layer using the same. The etching gas mixture is a mixture of Cl.sub.2 gas and N.sub.2 gas, wherein the N.sub.2 gas is in the range of about 30% by volume of the total volume of Cl.sub.2 gas and N.sub.2 gas combined. In the electrode layer etching method of the present invention, the polysilicon electrode layer is formed on a semiconductor substrate. A mask pattern of an oxide or photoresist is then formed on the electrode layer. The electrode layer is etched using a plasma formed by the gas mixture of Cl.sub.2 gas and N.sub.2 gas, with the mask pattern functioning as an etching mask. An upper power source of the plasma etching apparatus delivers power in the range of about 500 to 1000 W, while the etching gas mixture is formed by supplying Cl.sub.2 gas at a rate of about 100 to 400 sccm, and N.sub.2 gas at a rate of about 3 to 15 sccm.