The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Nov. 18, 1998
Applicant:
Inventor:
Andy Chuang, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438286 ; 438596 ; 438682 ; 438592 ; 438303 ;
Abstract
A method has a feature that one side of the spacers surrounding a gate of a MOS transistor is removed and another side of the spacers is exposed. By the method of this invention, the gate, the source and the pick-up region of a well are electrically connected by a plug through a silicide layer covering them. Furthermore, the pick-up region is adjacent to the source such that the effective surface area can be reduced and the process has a higher error tolerance.
Quick Actions:
Chuang, Andy. (2000). Method for forming semiconductor device with common gate, source and well (U.S. Patent No. 6093609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6093609
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile