The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
May. 04, 1998
Applicant:
Inventors:
Sung-Hun Chi, Seoul, KR;
Jae-Hee Ha, Cheongju, KR;
Assignee:
LG Semicon Co., Ltd., Cheongju, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438719 ; 438721 ; 438738 ; 438733 ;
Abstract
A dry etching method for a multilayer film is disclosed, which is capable of dry-etching a multilayer film such as a titanium polyside (a polysilicon layer and a titanium silicide layer) and includes the steps of a first step for anisotropically etching the titanium silicide layer using a plasma containing Cl.sub.2 /N.sub.2 gas, and a second step for anisotropically etching the polysilicon layer using a plasma containing Cl.sub.2 /O.sub.2.