The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Aug. 20, 1999
Chih Ming Chen, Hsinchu, TW;
Worldwide Semiconductor MFG, Hsinchu, TW;
Abstract
A semiconductor flash memory cell. A p-well is formed in a semiconductor substrate. A thin oxide layer is formed over the p-well and semiconductor substrate. A dielectric pillar extending up from the semiconductor substrate is formed to support a control gate. A select gate is formed that extends underneath the control gate to be between the control gate and the thin oxide layer. Next, a floating gate is formed to extend underneath the control gate to be between the control gate and the thin oxide layer. A source region is formed in the p-well to be adjacent to the floating gate. Finally, a drain is formed in the p-well, the drain formed adjacent to the select gate.