The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Oct. 29, 1996
Applicant:
Inventors:
Assignee:
National Science Council, , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438788 ; 438149 ; 438787 ; 438D / ;
Abstract
A method of making a polysilicon thin-film transistor is presented. Device characteristics are improved when a silicon dioxide capping layer is formed by an ion plating method.
Yeh, Ching-Fa. (2000). Method of making a tft having an ion plated silicon dioxide capping layer (U.S. Patent No. 6087276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6087276
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile