The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Jun. 11, 1999
Byung-Hyug Roh, Yongin-shi, KR;
Samsung Electronics Co., Ltd., Kyunnggi-do, KR;
Abstract
A method for forming a trench isolator in a semiconductor substrate comprises: forming a mask layer on the substrate having a opening defining a trench formation region on the substrate; etching the semiconductor substrate through the opening in the mask to form a trench in the substrate; depositing a trench isolation material on the substrate to fill the trench with the isolation material and form a trench isolator in the substrate; planarization-etching the trench isolation material until a top surface of the mask layer is exposed; and, forming a thin protective layer on the surface of the semiconductor substrate. The thin protective layer prevents an edge dipping effect of the trench isolator during subsequent cleaning processes, and enables the planarization-etching to reduce the thickness of the mask layer to the minimum thickness possible, thereby reducing the stresses applied to the semiconductor substrate by the mask layer during subsequent high temperature annealing processes.