The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Aug. 19, 1999
Applicant:
Inventor:
Min-hwa Chi, Hsinchu, TW;
Assignee:
Worldwide Semiconductor MFG, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257322 ; 257321 ; 257315 ; 257316 ;
Abstract
An ETOX cell formed in a semiconductor substrate is disclosed. The ETOX cell includes a p-well formed within the substrate. A floating-gate is formed above the p-well, the floating-gate being separated from the substrate by a thin oxide layer. Next, a control gate is formed above the floating-gate, the floating-gate and the control gate being separated by a dielectric layer. A drain region is formed in the p-well and adjacent to a first edge of the floating-gate. The drain region is of a first dopant type. Finally, a source region is formed in the p-well and adjacent to a second edge of the floating-gate, the source region being of a second dopant type.