The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Aug. 26, 1998
Chang-Gyu Kim, Kyunggi-do, KR;
Seok-Ji Hong, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method is disclosed for manufacturing a semiconductor device that is capable of minimizing a step difference between DRAM and logic regions of a semiconductor substrate by forming a capacitor in the DRAM cell region and then forming a metal interconnection in the logic region after deposition of a first insulating layer before planarization, the metal interconnection having height similar to the capacitor. Although a second insulating layer is deposited over the substrate, a step between the DRAM cell region and local region can be minimized because of the metal interconnection formed in the logic region. Thus, although only either CMP or etch back process is used, planarization of the second insulating layer is allowed.