The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2000

Filed:

Jun. 09, 1999
Applicant:
Inventors:

Jy-Hwang Lin, Kaohsiung, TW;

Yueh-Feng Ho, Hsinchu Hsien, TW;

Pei-Jen Wang, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438629 ; 438584 ; 438618 ; 438622 ; 438625 ;
Abstract

An improved method of fabricating an unlanded via hole on a semiconductor substrate is provided. A conductive line and a patterned anti-reflection coating layer are sequentially formed on the substrate wherein the patterned anti-reflection coating layer has a smaller width than the conductive line and a portion of the conductive layer is exposed by the patterned anti-reflection coating layer. A planarized dielectric layer is formed over the substrate to cover the patterned anti-reflection coating layer and the conductive line. A via hole is formed in the planarized dielectric layer to expose portions of surface and sidewalls of the patterned anti-reflection coating layer as well as the conductive line.


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