The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Dec. 05, 1996
Applicant:
Inventors:
Yaw Samuel Obeng, Orlando, FL (US);
Susan Clay Vitkavage, Orlando, FL (US);
Assignee:
Lucent Technologies, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438448 ;
Abstract
A method of semiconductor circuit fabrication utilizing the poly buffered LOCOS process is disclosed. Amorphous silicon is desirably formed by the decomposition of disilane at temperatures between 400-525.degree. C. The amorphous silicon exhibits less pits than what is produced by conventional processes. The absence of pits contributes to eventual substrate integrity.