The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Feb. 27, 1998
Applicant:
Inventors:
Jeremy A Theil, Mountain View, CA (US);
Gary W Ray, Mountain View, CA (US);
Karen L Seaward, Palo Alto, CA (US);
Francoise F Mertz, Palo Alto, CA (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
427573 ; 42725537 ; 4273977 ; 427574 ; 427579 ; 427598 ;
Abstract
A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.