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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6080683 B1

PDFFull Text
Date of Patent:
Jun. 27, 2000

Filed:

Mar. 22, 1999

Room temperature wet chemical growth process of sio based oxides on

Applicant:
Inventors:

Maria Faur, North Olmsted, OH (US);

Mircea Faur, North Olmsted, OH (US);

Dennis J Flood, Oberlin, OH (US);

Sheila G Bailey, Lakewood, OH (US);

Horia M Faur, North Olmsted, OH (US);

Assignee:

Special Materials Research and Technology, Inc., North Olmsted, OH (US);

Attorney:

Pearne & Gordon LLP

Primary Examiner:

John F Niebling

Assistant Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438770 ; 438769 ; 438787 ; 438789 ; 438790 ; 4274432 ; 427435 ;
Abstract

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.

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Faur, Maria. (2000). Room temperature wet chemical growth process of sio based oxides on (U.S. Patent No. 6080683). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6080683

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