The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Sep. 17, 1998
Thien T Nguyen, Austin, TX (US);
Mark I Gardner, Cedar Creek, TX (US);
Charles E May, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A dry etch process is presented wherein a semiconductor substrate is introduced into a reaction chamber between a first electrode and a second electrode. The semiconductor substrate may be positioned on the first electrode. A main flow of gas that includes an argon flow at an argon flow rate and a fluorocarbon flow at a fluorocarbon flow rate is established into the reaction chamber. RF power at a low frequency may then be applied to the first electrode for creating a fluorine-deficient plasma. An oxide layer arranged above the semiconductor substrate is exposed to the fluorine-deficient plasma for etching, in a single step, a portion of the oxide layer.