The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Oct. 03, 1996
Applicant:
Inventor:
Makoto Hashimoto, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438157 ; 438154 ; 438283 ;
Abstract
The present invention is intended to provide, in MOS transistors used as a bonding layer for silicon regions of an SOI substrate, an nMOS transistor on a silicon region of an SOI substrate which uses a polycrystalline silicon layer as a layer to be bonded with the silicon substrate and a pMOS transistor on another silicon region of the SOI substrate and electrically isolated back gate electrodes through a back gate insulation film on the silicon region side between the silicon regions and a polycrystalline silicon layer. A leak current is reduced and a malfunction of the transistors is eliminated by providing pickup electrodes for the back gate electrodes.