The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Aug. 28, 1998
Soichiro Mitsui, Kanagawa, JP;
Kenichi Murooka, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An X-ray lithography system and an X-ray exposure method are provided which is able to perform distortion correction and magnification correction in pattern projection, by using an X-ray reflection mirror whose radius of curvature is changed so as to differentiate its reflection characteristic according to an in-plane incident position of an X-ray beam. More particularly, the X-ray lithography system comprises an X-ray reflection mirror driving unit connected to the X-ray reflection mirror, for changing a position of the X-ray beam incident into the X-ray reflection mirror, a relative positional information acquiring unit for acquiring relative positional information between a pattern on the X-ray mask and a pattern on the wafer as an exposed substrate during exposure, a two dimensional information acquiring unit for acquiring two dimensional information of the X-ray beam during exposure, and an X-ray reflection mirror controlling unit for feedback-controlling the X-ray reflection mirror driving unit in real time, based on the relative positional information and the two dimensional information during exposure by the X-ray beam. Thus, while feedback-controlling an incident position and an incident angle of the X-ray beam into the X-ray reflection mirror and relative positional relationship between the X-ray reflection mirror and the X-ray mask, exposure can be performed by setting a divergence angle or collimation of the X-ray beam to desired values on a surface of the X-ray mask. Accordingly, the mask pattern can be aligned and projected onto each exposure field on the wafer in which distortion is caused due to various manufacturing processes.