The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Dec. 04, 1997
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257316 ; 257314 ; 257324 ;
Abstract
An n-type diffused layer is formed in a p-type semiconductor substrate. A control gate electrode of a memory cell MC is connected with a metal interconnect of a first layer and the metal interconnect is connected with the diffused layer. Moreover, a metal interconnect of the first layer is connected with a metal interconnect of a second layer. An interconnect of the second layer is connected with the output node of a row decoder.