The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
May. 06, 1998
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257295 ; 257296 ; 257306 ;
Abstract
A lower electrode layer 1 of a capacitor 10 is formed by sputtering performed at a temperature lower than 450.degree. C. in an atmosphere containing oxygen, and thereby the lower electrode layer 1 thus formed contains oxygen. Thereby, a method of manufacturing a semiconductor device having the capacitor can suppress current leak, and can prevent peeling of an electrode.