The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2000

Filed:

Nov. 03, 1998
Applicant:
Inventors:

Mainn-Gwo Chen, Taichung, TW;

Ming-Jer Chen, Hsinchu, TW;

Chuan H Liu, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H / ;
U.S. Cl.
CPC ...
361 56 ; 361111 ;
Abstract

An electrostatic discharge protective circuit formed by use of a silicon controller rectifier is coupled to an input port and an internal circuit for discharging electrostatic charges on the input port to ground. When the electrostatic charges are applied on the input port, a punch-through effect is created between a first P-type diffusion region and a second N-type diffusion region to turn on a parasitic NPN bipolar junction transistor. At the same time, a voltage is applied on a gate of the MOS transistor via a small-signal equivalent capacitor to turn on itself, thereby discharging the electrostatic charges. Accordingly, the trigger voltage of the silicon controller rectifier can be efficiently lowered to improve the electrostatic discharge protective capability of the silicon control rectifier.


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