The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Jan. 16, 1998
Applicant:
Inventors:
Chuan-Yung Hung, Cupertino, CA (US);
John Costello, San Jose, CA (US);
Stephanie Tran, San Jose, CA (US);
Guu Lin, San Jose, CA (US);
Mark Fiester, Los Gatos, CA (US);
Assignee:
Altera Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F / ;
U.S. Cl.
CPC ...
327536 ; 327537 ;
Abstract
Improved charge pump circuitry that significantly reduces voltage stress on transistor gate oxides is disclosed. The charge pump circuit according to a preferred embodiment of the present invention includes circuitry that biases the otherwise vulnerable transistors in the charge pump circuit such that the voltage across their gate oxide is reduced. The charge pump of the present invention further provides circuitry to reduce leakage current.