The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Mar. 24, 1998
Applicant:
Inventors:
Chiharu Nozaki, Yokohama, JP;
Minoru Amano, Funabashi, JP;
Yukie Nishikawa, Narashino, JP;
Masayuki Sugiura, Yokohama, JP;
Takao Noda, Yokohama, JP;
Aki Sasaki, Koshigaya, JP;
Yasuo Ashizawa, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257194 ; 257 94 ; 257 96 ; 257 98 ; 257280 ; 257284 ; 257473 ; 257486 ;
Abstract
In an HEMT, a channel forming layer is arranged above a semi-insulating substrate via a buffer layer. A spacer layer is arranged on the channel forming layer and an electron supplying layer and a Schottky contact layer are sequentially arranged on the spacer layer. A diffusion preventing layer, for preventing a metal element of a gate electrode from diffusing into the channel forming layer, is arranged in the Schottky contact layer.