The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Jun. 19, 1998
Christophe Starck, Ste Genevieve des-Bois, FR;
Lionel Le Gouezigou, Le Val Saint Germain, FR;
Alcatel, Paris, FR;
Abstract
A method of fabricating a semiconductor component, the method including at least one step of etching an upper layer formed on a substrate. In the method, prior to forming the upper layer, at least one set made up of marker layers separated by intermediate layers of predetermined thicknesses is caused to be grown, where the marker layers and adjacent intermediate layers have different refractive indices, and then during etching of the upper layer refractive index discontinuities are detected optically and etching is stopped when the sequence of the optically detected discontinuities corresponds to a reference sequence representative of the thicknesses of the intermediate layers.