The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2000

Filed:

Sep. 02, 1998
Applicant:
Inventors:

Richard L Kleinhenz, Wappingers Falls, NY (US);

Wesley C Natzle, New Paltz, NY (US);

Chienfan Yu, Highland Mills, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438689 ; 438-6 ; 438510 ; 438424 ; 438706 ; 438696 ; 438700 ;
Abstract

A method of patterning a layer on sidewalls of a trench in a substrate for integrated circuits includes the steps of forming an insulator layer on sidewalls of a trench in a substrate with a horizontal top surface above the sidewalls, recessing a masking material such as an organic photoresist in the trench below the top surface of the substrate such that a portion of the insulator layer on the sidewalls of the substrate is exposed, and etching the insulator layer with a gaseous hydrogen flouride-ammonia mixture. The masking material and the substrate are composed of a different material than the insulator layer.


Find Patent Forward Citations

Kleinhenz, Richard. (2000). Method of patterning sidewalls of a trench in integrated circuit (U.S. Patent No. 6071815). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6071815

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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