The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Jan. 25, 1999
Erzhuang Liu, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
The process of the present invention can be used for conventional processing or for the Damascene process. The key concept of the present invention is a functional 'filler' material which can later be removed (decomposed) to leave an air gap between the conducting lines. The filler material can be deposited as a step during conventional metal etch processing or it can be deposited as a first step of the processing of a semiconductor wafer. Leakage currents can be reduced as part of the present invention by applying passivation layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile