The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
May. 21, 1997
Yoshiyuki Shimanuki, Hiratsuka, JP;
Toshimichi Kubota, Hiratsuka, JP;
Toshirou Kotooka, Hiratsuka, JP;
Makoto Kamogawa, Hiratsuka, JP;
Komatsu Electronic Metals Co., Ltd., Kanagawa, JP;
Abstract
An apparatus for fabricating single-crystal silicon easily controlling a temperature gradient based on the Czochralski (CZ) method, and more particularly preventing as-grown defects created in order to obtain high-quality single-crystal silicon. The above-mentioned apparatus includes a first thermal shield member surrounding the pulling single-crystal silicon and a second thermal shield member inside the first thermal shield member, surrounding the pulling single-crystal silicon. The second thermal shield member is fixed on the first thermal shield member by a support located on the external surface of the second thermal shield member and connected to the first thermal shield member. The surroundings of a solid-liquid interface are extremely cooled by using the first thermal shield member, thereby a stable shape of the single-crystal silicon is formed. The temperature gradient of the temperature region of 1000.degree. C..about.1200.degree. C. where the single-crystal silicon passes is decreased by using the second thermal shield member so as to reduce the crystal defect density, thereby obtaining single-crystal silicon having a stronger oxide film voltage breakdown characteristic. If the support length is changed, the second thermal shield member can be adjusted in the upper or lower direction in order to make the expected portion of single-crystal silicon cool slowly.