The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Jun. 25, 1999
Shigetaka Tomiya, Kanagawa, JP;
Satoru Kijima, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Hironori Tsukamoto, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
The purpose of the present invention is to provide a semiconductor light-emitting element that can reduce an operational voltage by improving a contact construction with a p-side electrode. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer, a compositional gradient super-lattice layer, and a low defect contact layer are sequentially laminated on an n-type substrate. The compositional gradient super-lattice layer is formed by alternately laminating p-type ZnTe layers and p-type ZnSe layers. The p-type ZnTe layers are formed to be thickened toward the side of the low defect contact layer. The thickness of the low defect contact layer must be 5 nm or less. Relaxing lattice distortion reduces defect density of the low defect contact layer. Accordingly, the increase in the operational voltage immediately after energization is suppressed, and the operational voltage becomes lower.