The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Sep. 04, 1998
Applicant:
Inventor:
Xia Li, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438690 ; 438700 ; 438737 ;
Abstract
Aspects for exposing local areas for desired nodes in a multi-layer integrated circuit are described. In an exemplary method aspect, the method includes exposing at least one desired local area using focused ion beam etching, and performing reactive ion etching to complete delayering of the at least one desired local area to gain access to at least one lower level node of the integrated circuit. The exposing step further includes using a high current ion beam in the focused ion beam etching.
Li, Xia. (2000). Exposure of desired node in a multi-layer integrated circuit using fib (U.S. Patent No. 6069079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6069079
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile