The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Nov. 24, 1997
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
It is an object to obtain a semiconductor device free from a necessity of stacking a contact hole and a lower electrode, thus preventing occurrence of an error in stacking and enabling the capacitor to be formed precisely. Amorphous silicon 10b is deposited on a interlayer insulating film 9 including the inside portion of the contact hole 9a, and then a resist 14 is applied to the amorphous silicon 10b. Then, a mask for photolithography which has been used to form the contact hole 9a is used to perform a photolithography process to form the resist 14 to have a required shape. Then, implantation of phosphorus ions is performed such that the resist 14 is used as a mask 14a for preventing implantation of ions. Then, the amorphous silicon 10b is subjected to heat treatment to partially single crystallize the amorphous silicon 10b so that single crystal silicon 10c is grown. The difference in the etching rate between the amorphous silicon 10b and the single crystal silicon 10c is used to selectively remove the amorphous silicon 10b by using dry etching technique so that a storage node 10 is formed.