The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Oct. 15, 1997
Applicant:
Inventors:
Takashi Sato, Kanagawa, JP;
Katsuya Okumura, Poughkeepsie, NY (US);
Junichiro Iba, Wappingers Falls, NY (US);
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03D / ;
U.S. Cl.
CPC ...
355 53 ; 430-5 ; 430311 ; 438699 ;
Abstract
A method and system for planarization of a semiconductor wafer is disclosed. The disclosed system includes a mask with at least a medium density pattern, where the pattern dimensions are below the resolving power of an exposure system. Less than full intensity of the exposing radiation passes through the medium density pattern of the mask to a resist layer and does not completely expose the underlying resist. Through adapting at least a portion of the mask to account for surface irregularities of a wafer's surface, improved planarization of the surface is achieved.