The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Jul. 08, 1998
Applicant:
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
326 21 ; 326 34 ; 326 83 ;
Abstract
A circuit configured with MOSFETs having a first range of subthreshold conduction, is provided with at least one switchable pathway between the circuit and a power or ground node, such that the switchable pathway is operable to substantially reduce leakage current through the circuit. In a further aspect of the present invention, the switchable pathway is a FET having substantially the same subthreshold conduction characteristics as the FETs in the circuit to which the switchable pathway is coupled, the FET being configured to be driven into both inversion and accumulation.