The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Jun. 04, 1999
Szetsen Steven Lee, Taipei, TW;
Abstract
A method of forming a field emission device for a flat panel display includes providing a conductive silicon substrate, forming a hole on the upper surface of the substrate, covering the hole with a conductive layer of silicon to form a valley in portions of the layer of silicon above the hole, covering the silicon layer with a first oxide layer, planarizing the first oxide layer to leave oxide mainly in the valley, etching the oxide left in the valley and the layer of silicon to form a portion of the layer of silicon into a structure having a peak above the hole, forming a second oxide layer to cover the peak, planarizing the second oxide layer to leave a small amount of oxide above the peak, selectively etching the second oxide layer to form a step around the peak, forming a metal layer on portions on the second oxide layer, etching the metal layer to remove metal from above the step, forming a first silicon nitride layer on the step and remaining portions of the metal layer, selectively etching a portion of the first silicon nitride layer above the step, forming a second silicon nitride layer on the device, non-selectively etching the second silicon nitride layer, etching the step to expose the peak, and removing the second silicon nitride layer.