The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
May. 20, 1998
Applicant:
Inventors:
Naoharu Sugiyama, Yokohama, JP;
Tsutomu Tezuka, Yokohama, JP;
Riichi Katoh, Yokohama, JP;
Atsushi Kurobe, Yamato, JP;
Tetsufumi Tanamoto, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257321 ; 257-9 ; 257 12 ; 257 14 ; 257 15 ; 257 17 ; 257 20 ; 257 24 ; 257 30 ; 257314 ; 257315 ; 257317 ; 438197 ; 438201 ; 438257 ; 438264 ; 438962 ;
Abstract
The semiconductor device comprises a first insulating layer formed on the semiconductor substrate, at least one double-deck semiconductor nanocrystal formed on the first insulating layer, the at least one double-deck semiconductor nanocrystal comprising a first semiconductor nanocrystal and a second semiconductor nanocrystal stacked one upon the other via a second insulating layer, and a third insulating layer selectively formed on the first insulating layer so as to cover the at least one double-deck semiconductor nanocrystal.