The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Dec. 10, 1997
Shye Lin Wu, Hu-Ko Shang, TW;
Texas instruments-Acer Incorporated, Hsin-Chu, TW;
Abstract
This invention describes a method to form shallow trench isolation with global planarization. The process steps consist of depositing the etching-resistant masked layers stacked on silicon substrate, where the isolated area region is defined; then the isolated area region is dryly etched and is to be deposited oxidation-resistant thin films and form oxidation-resistant spacers around the side walls of the isolated region with the deposited thin films. Because the thin films and spacers are oxidation resistant, during growth of an oxide film within the isolated area, the bird's beak lateral encroachment can be prevented. This results in nearly abrupt interfaces at the sides of the isolated area. In addition, a high temperature oxidation process is employed to produce a high quality of oxide film and simultaneously recover the possible damages from dry etching. This method for forming shallow trench isolation provides a better global planarization, providing a smoother platform on which further circuit elements can be built.