The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Apr. 05, 1999
Claymens Lee, Fengshan, TW;
United Semiconductor Corp., HsinChu, TW;
Abstract
A method for manufacturing a flash memory with a shallow trench isolation and a buried bit line. In the invention, the shallow trench isolation is used as an isolation region, so that the size of the devices can be greatly reduced and the integration of the devices can be greatly increased. Additionally, the shallow trench isolation is formed in the substrate before the buried bit line implantation step is performed, so that the short channel effect caused by the lateral diffusion of the doped ions can be eliminated. Moreover, since the neighboring doped regions are electrically coupled to each other through the polysilicon layer, the access rate of the flash memory can be enhanced.