The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Dec. 19, 1997
Mark I Gardner, Cedar Creek, TX (US);
Mark C Gilmer, Austin, TX (US);
H Jim Fulford, Austin, TX (US);
Jack C Lee, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device having a gate insulating tri-layer includes a substrate, a nitrogen-containing layer disposed on the substrate, a first dielectric layer disposed over the nitrogen containing layer, a second dielectric layer disposed over the first dielectric layer, and a gate electrode disposed over the second dielectric layer. One of the first and second dielectric layers is formed using an oxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers is formed using an oxide having a higher dielectric constant ranging from 10 to 10,000.