The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2000

Filed:

May. 27, 1998
Applicant:
Inventors:

Jean Barret, Eguilles, FR;

Antoine Pavlin, Puyricard, FR;

Pietro Fichera, Luynes, FR;

Assignee:

STMicroelectronics S.A., Gentilly, FR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257355 ; 257356 ; 257357 ; 257358 ; 257359 ; 257360 ; 257904 ; 257135 ; 257213 ; 257302 ; 257329 ; 257328 ; 361 56 ; 361 91 ; 361111 ; 361 58 ;
Abstract

The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has an N-type substrate corresponding to the drain of the MOS transistor, and logic components being realized in at least one P-type well formed in the upper surface of the substrate. Each of the N-type regions connected to the ground of the logic circuit, or to a node of low impedance with respect to the ground, is in series with a resistor.


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