The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2000

Filed:

Sep. 17, 1998
Applicant:
Inventor:

Chi Kang Liu, Tao-Yuan County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438637 ; 438622 ; 438627 ; 438625 ; 438689 ; 438712 ;
Abstract

A method for fabricating a copper, or a copper-titanium nitride-titanium, interconnect structure, using a low temperature RIE patterning procedure, has been developed. The RIE patterning procedure features the use of SiCl.sub.4 and nitrogen, as reactants, with amount of nitrogen supplied, being equal to, or greater than, the SiCl.sub.4 level. The addition of nitrogen, to the etching ambient, results in the formation of a non-cross-linked, by-product, which is easily removed during the patterning procedure, this not interfering with the creation of interconnect structure. Without the addition of nitrogen, a cross-linked, by-product, would be formed, during the low temperature RIE procedure, with the redeposited, cross-linked, by-product, interfering with the patterning of the copper interconnect structure.


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Liu, Chi. (2000). Dry etching procedure and recipe for patterning of thin film copper (U.S. Patent No. 6057230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6057230

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