The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2000

Filed:

Dec. 03, 1997
Applicant:
Inventors:

Masashi Ura, Tokyo, JP;

Shoichi Takanabe, Tokyo, JP;

Nobuhiro Nakamura, Kumamoto, JP;

Yukio Endoh, Kumamoto, JP;

Osamu Itoh, Kumamoto, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438723 ; 438 30 ; 438608 ; 438724 ; 438743 ; 438744 ; 216 23 ;
Abstract

A method for forming a contact hole in an active matrix substrate, the method comprising steps of: (a) depositing an insulating film covering a first electrode provided on a substrate and the substrate; (b) forming a contact hole by patterning said insulating film by means of dry etching; and (c) forming a second electrode, and contacting the second electrode with the first electrode; wherein in the step (b) after forming a contact hole by dry etching, a surface treatment by plasma etching or reactive ion etching with oxygen gas under a condition in which a pressure P is in a range of 100 Pa to 400 Pa is performed.


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