The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Nov. 12, 1997
Applicant:
Inventors:
Deepak K Nayak, Santa Clara, CA (US);
Ming-Yin Hao, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438232 ; 438305 ; 438307 ; 438308 ; 438530 ; 438532 ; 438515 ; 438516 ;
Abstract
A CMOS device and a method for forming the same is provided so as to overcome the problem of boron penetration through the thin gate oxide of P-channel devices. Silicon is implanted into the polysilicon gate electrode of the PMOS device functioning as a diffusion barrier for preventing boron penetration through the thin gate oxide and into the semiconductor substrate. As a result, the reliability of the CMOS device will be enhanced.