The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2000

Filed:

Sep. 10, 1998
Applicant:
Inventors:

Yoshiharu Anda, Osaka, JP;

Toshinobu Matsuno, Kyoto, JP;

Manabu Yanagihara, Osaka, JP;

Mitsuru Tanabe, Osaka, JP;

Toshiaki Matsui, Tokyo, JP;

Nobumitsu Hirose, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438167 ; 438182 ; 438574 ; 438950 ;
Abstract

A lower resist film, which is made of PMMA for EB exposure and has a thickness of about 200 nm, is applied onto a substrate, and then an upper resist film to be exposed to i-rays is applied on the lower resist film. Thereafter, a mixed layer, in which the upper and lower resist films are mixed, is formed in the interface between the upper and lower resist films. Next, the upper resist film, except for the head-forming region thereof, is exposed to i-rays and developed, thereby forming an upper-layer opening. And then the mixed layer and a leg-forming region of the lower resist film are exposed to EB and developed, thereby forming a lower-layer opening having an upper part like a taper progressively expanding upward.


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Anda, Yoshiharu. (2000). Semiconductor device and method for fabricating the same (U.S. Patent No. 6051454). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6051454

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