The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Sep. 28, 1998
Applicant:
Inventor:
Tomofune Tani, Tokyo, JP;
Assignee:
United Microelectronics, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438433 ; 438430 ; 438286 ; 257630 ; 257330 ;
Abstract
A method of fabricating a semiconductor device, comprises the steps of forming a trench in a semiconductor substrate by using a selective etching process; forming an insulating layer at least on the inner surface of the trench; forming a film containing silicon at least on the insulation layer in the trench and doping a first impurity of a first conductivity type by a first ion implantation to a predetermined depth of the semiconductor substrate at least through the film containing silicon, and wherein the first impurity doped into the semiconductor substrate by the first ion implantation is at a level deeper than the bottom of the trench.