The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Sep. 03, 1996
Applicant:
Inventors:
Il-sub Chung, Seoul, KR;
In-kyung Yoo, Kyungki-do, KR;
Chi-won Chung, Seoul, KR;
Seshu B Desu, Blacksburg, VA (US);
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-3 ; 438240 ;
Abstract
A ferroelectric capacitor taking a multilayer structure wherein a conductive oxide layer which is formed between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current. The multilayer structure can be fabricated by depositing a silicon oxide (SiO.sub.2) layer, an adhesive layer, a bottom metal layer, a lower conductive oxide layer, a ferroelectric layer, an upper conductive oxide layer and a top metal electrode layer are deposited over a silicon substrate, in sequence.